nte5810 & nte5811, nte5870 thru nte5891 silicon power rectifier diode, 12 amp, do4 description : the nte5810, nte5811, and nte5870 through nte5891 are low power general purpose rectifier diodes in a do4 type package designed for battery chargers, converters, power supplies, and ma- chine tool controls. features : high surge current capability high voltage available designed for a wide range of applications available in anode ? to ? case or cathode ? to ? case style ratings and characteristics : average forward current (t c = +144 c max), i f(av) 12a .................................... maximum forward surge current, i fsm 50hz 230a ...................................................................... 60hz 240a ...................................................................... fusing current, i 2 t 50hz 260a 2 s .................................................................... 60hz 240a 2 s .................................................................... fusing current, i 2 t 3580a 2 s ......................................................... maximum reverse recovery voltage range, v rrm 50 to 1200v .............................. voltage ratings : (t j = +175 c, note 1) nte type number v rrm ? max repetitive peak reverse volt. (v) v rsm ? max non ? repetitive peak reverse voltage (v) v r ? max. direct reverse voltage (v) v r(sr) minimum avalanche voltage (v) i rm ? max reverse current rated v rrm (ma) cathode to case anode to case 5870 5871 50 75 50 ? 12 5872 5873 100 150 100 ? 12 5874 5875 200 275 200 ? 12 5876 5877 300 385 300 ? 12 5878 5879 400 500 400 500 12 5880 5881 500 613 500 626 12 5882 5883 600 725 600 750 12 5886 5887 800 950 800 950 12 5890 5891 1000 1200 1000 1150 12 5810 5811 1200 1400 1200 1350 12
electrical specifications: parameter symbol test conditions rating unit maximum average forward current i f (av) 180 sinusoidal condition, t c = +144 c max 12 a maximum rms forward current i f(rms) 19 a maximum peak one ? cycle non ? repetitive surge current i fsm t = 10ms sinusoidal half wave, no voltage reapplied 225 a t = 8.3ms 235 a t = 10ms 100% rated voltage reapplied, t j = +175 c 265 a t = 8.3ms 280 a maximum i 2 t for individual device fusing i 2 t t = 10ms 100% rated voltage reapplied, initial t j = +175 c 351 a 2 s t = 8.3ms 320 a 2 s maximum i 2 t i 2 t t = 0.1 to 10ms, no voltage reapplied, note 1 3511 a 2 t maximum peak forward voltage v fm i fm = 38a, t j = +25 c 1.26 v maximum value of threshold voltage v m (to) t j = +175 c 0.68 v maximum value of forward slope resistance r t t j = +175 c 13.51 m note 1. i 2 t for time t x = i 2 t t x thermal ? mechanical specifications: parameter symbol test conditions rating unit maximum operation junction temperature t j ? 65 to + 175 c maximum storage temperature t stg ? 65 to + 200 c maximum internal thermal resistance junction ? to ? case r thjc dc operation 2.0 k/w thermal resistance, case ? to ? sink r thcs mounting surface flat, smooth and greased 0.5 k/w mounting torque t non ? lubricated threads 1.2 ? 1.5 (10.5 ? 13.5) m ? n (in ? lb) approximate weight wt 11 (0.25) g (oz) .060 (1.52) dia min .405 (10.3) max 1.250 (31.75) max .437 (11.1) max .175 (4.45) max .424 (10.8) dia max .250 (6.35) max .453 (11.5) max 10 ? 32 nf ? 2a
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